MRF8P20165WHR3 datasheet(2/16 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF8P20165WHR3 MRF8P20165WHSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

III (Minimum)

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

On Characteristics (2)

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 232 μAdc)

VGS(th)

1.2

1.8

2.7

Vdc

Gate Quiescent Voltage

(VDD =28 Vdc, IDA = 550 mAdc, Measured in Functional Test)

VGS(Q)

2.0

2.7

3.5

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID =1.5 Adc)

VDS(on)

0.05

0.2

0.3

Vdc

Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.3 Vdc,

Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Power Gain

Gps

14.2

14.8

17.2

Drain Efficiency

ηD

40.6

44.3

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

5.2

5.8

—

Adjacent Channel Power Ratio

ACPR

—

--31.0

--28.7

dBc

Typical Broadband Performance (4) — (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA,

VGSB =1.3 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

1930 MHz

16.1

47.0

7.1

--27.7

1960 MHz

16.3

47.7

7.1

--29.7

1995 MHz

16.3

46.0

7.0

--33.3

1. Side A and Side B are tied together for this measurement.

2. VDDA and VDDB must be tied together and powered by a single DC power supply.

3. Part internally matched both on input and output.

4. Measurement made with device in a Symmetrical Doherty configuration.

(continued)

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