T-Max

TM

650V

94A

APT94N65B2C3

APT94N65B2C3G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

MAXIMUM RATINGS

All Ratings per die: T

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

(DSS)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Avalanche Energy Rated

• Extreme dv/dt Rated

• Dual die (parallel)

• Popular T-MAX Package

Super Junction MOSFET

MIN

TYP

MAX

650

0.03

0.035

1.0

50

100

±200

2.1

3

3.9

C

Power Semiconductors

O

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG."

G

D

S

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.

Microsemi Website - http://www.microsemi.com

Symbol

Parameter

APT94N65B2C3(G)

UNIT

V

DSS

Drain-Source Voltage

650

Volts

I

D

Continuous Drain Current @ T

1

94

Amps

Continuous Drain Current @ T

60

I

DM

282

V

GS

Gate-Source Voltage Continuous

20

Volts

P

D

Total Power Dissipation @ T

833

Watts

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

T

L

Lead Temperature: 0.063" from Case for 10 Sec.

260

dv

/

dt

Drain-Source Voltage slope (V

50

V/ns

I

AR

7

Amps

E

AR

1

mJ

E

AS

Single Pulse Avalanche Energy

( Id = 3.5A, Vdd = 50V )

1800