DYNAMIC CHARACTERISTICS

APT94N65B2C3(G)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

MIN

TYP

MAX

0.15

31

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Switching Energy

Turn-off Switching Energy

Test Conditions

V

V

f = 1 MHz

V

V

I

INDUCTIVE SWITCHING

V

V

I

R

INDUCTIVE SWITCHING @ 25°C

V

I

INDUCTIVE SWITCHING @ 125°C

V

I

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 Repetitive avalanche causes additional power losses that can be calcula-

ted as P

3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

4 See MIL-STD-750 Method 3471

5 Eon includes diode reverse recovery.

6 Maximum 125°C diode commutation speed = di/dt 600A/μs

MIN

TYP

MAX

13940

5200

229

580

72

234

32

59

498

167

2684

4448

3391

5082

UNIT

pF

nC

ns

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.1

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note:

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I

S

Continuous Source Current (Body Diode)

94

Amps

I

SM

282

V

SD

0.9

1.2

Volts

t

rr

Reverse Recovery Time

(I

di

/

T

960

ns

1271

Q

rr

Reverse Recovery Charge

(I

di

/

T

31

μC

43

I

RRM

Peak Recovery Current

(I

di

/

T

58

Amps

56