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SIP11203 Datasheet(PDF) 8 Page - Vishay Siliconix |
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SIP11203 Datasheet(HTML) 8 Page - Vishay Siliconix |
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8 / 18 page ![]() www.vishay.com 8 Document Number: 73868 S11-0975–Rev. C, 16-May-11 Vishay Siliconix SiP11203, SiP11204 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 APPLICATIONS INFORMATION Powering SiP11203/SiP11204 The SiP11203/SiP11204 has an internal pre-regulator to provide 5 V at VL, which biases many of the internal sub-circuits. This allows the IC to operate from any input voltage within the allowable VIN range. At the same time, VIN provides the supply voltage to the gate driver outputs (OUTA and OUTB) directly. The gate drive level to the synchronous rectifier MOSFETs is determined by VIN The VIN voltage can be derived using conventional methods, such as an extra winding on the power transformer or on the output inductor. Alternatively, this supply can be derived from the pulse transformer used to transmit synchronous rectifier timing signals from the primary to the secondary, as shown in Figure 2 below. The voltage level on VIN will be determined by the turn ratio of the pulse transformer and the differential voltage between SRL of the Si9122, Si9122A, Si9122E and SRH of of the Si9122, Si9122A, Si9122E. Note that this circuit will cause the voltages at INA and INB to be twice that of VIN. Therefore it may be necessary to limit the voltage seen by INA and INB in order to avoid exceeding their recommended operating values. START-UP DRIVER OPERATION During start-up of the SiP11203/SiP11204, the MOSFET drivers (OUTA and OUTB) are disabled until VL is at 90 % of its final value. To fully prevent any spurious turn-on of the synchronous rectifier MOSFETs, the gates of the MOSFETs are held off during this start up period. Until the main drivers are enabled, the INA and INB drive paths are re-routed, or “swapped,” inside the IC. In conjunction with a dedicated n-channel hold-off MOSFET “inverter” placed in parallel with each main driver, this allows the IC to ground the appropriate synchronous rectifier gate at the necessary time. See Figure 3. If the first two pulses coming through the pulse transformer are considered, the following sequence of events follows: • INA goes low, which would normally command the OUTA driver to go low. This would prevent spurious turn-on of the associated synchronous rectifier. However, since the voltage to the IC is below its normal operating level, it cannot be guaranteed that OUTA can in fact go to its necessary state. For this reason, the OUTA and OUTB drivers are disabled while VL < UVLOR. • When INA goes low, INB will be driven to a level of 2 x VIN. This is due to the way in which the secondary of the pulse transformer is rectified to provide VIN. Specifically, this results from the rectifier diodes clamping the secondary’s negative excursions one diode drop below ground (See Figure 2). Figure 2. Typical schematic showing how the VIN supply for SiP11203/SiP11204 is generated using the pulse transformer providing the synchronous rectifier timing signals SRH SRL INA V INB GND IN SiP11203 SiP11204 SRH SRL INA V INB GND IN SiP11203 SiP11204 SiP11203 SiP11204 |
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