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SIP11203 Datasheet(PDF) 8 Page - Vishay Siliconix

Part # SIP11203
Description  Synchronous Rectifier Driver with Power Up/Down Control, Output OVP, Error Amplifier and Precision Reference
PDF  18 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIP11203 Datasheet(HTML) 8 Page - Vishay Siliconix

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Document Number: 73868
S11-0975–Rev. C, 16-May-11
Vishay Siliconix
SiP11203, SiP11204
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS INFORMATION
Powering SiP11203/SiP11204
The SiP11203/SiP11204 has an internal pre-regulator
to provide 5 V at VL, which biases many of the internal
sub-circuits. This allows the IC to operate from any
input voltage within the allowable VIN range. At the
same time, VIN provides the supply voltage to the gate
driver outputs (OUTA and OUTB) directly. The gate
drive level to the synchronous rectifier MOSFETs is
determined by VIN
The VIN voltage can be derived using conventional
methods, such as an extra winding on the power
transformer or on the output inductor. Alternatively,
this supply can be derived from the pulse transformer
used to transmit synchronous rectifier timing signals
from the primary to the secondary, as shown in Figure
2 below. The voltage level on VIN will be determined by
the turn ratio of the pulse transformer and the
differential voltage between SRL of the Si9122,
Si9122A, Si9122E and SRH of of the Si9122, Si9122A,
Si9122E. Note that this circuit will cause the voltages
at INA and INB to be twice that of VIN. Therefore it may
be necessary to limit the voltage seen by INA and INB
in order to avoid exceeding their recommended
operating values.
START-UP DRIVER OPERATION
During
start-up
of
the
SiP11203/SiP11204,
the
MOSFET drivers (OUTA and OUTB) are disabled until
VL is at 90 % of its final value. To fully prevent any
spurious
turn-on
of
the
synchronous
rectifier
MOSFETs, the gates of the MOSFETs are held off
during this start up period. Until the main drivers are
enabled, the INA and INB drive paths are re-routed, or
“swapped,” inside the IC. In conjunction with a
dedicated n-channel hold-off MOSFET “inverter”
placed in parallel with each main driver, this allows the
IC to ground the appropriate synchronous rectifier gate
at the necessary time. See Figure 3.
If the first two pulses coming through the pulse
transformer are considered, the following sequence of
events follows:
• INA goes low, which would normally command the
OUTA driver to go low. This would prevent spurious
turn-on of the associated synchronous rectifier.
However, since the voltage to the IC is below its
normal operating level, it cannot be guaranteed that
OUTA can in fact go to its necessary state. For this
reason, the OUTA and OUTB drivers are disabled
while VL < UVLOR.
• When INA goes low, INB will be driven to a level of
2 x VIN. This is due to the way in which the
secondary of the pulse transformer is rectified to
provide VIN. Specifically, this results from the
rectifier diodes clamping the secondary’s negative
excursions one diode drop below ground (See
Figure 2).
Figure 2. Typical schematic showing how the VIN supply for SiP11203/SiP11204 is generated using the pulse transformer providing the
synchronous rectifier timing signals
SRH
SRL
INA
V
INB
GND
IN
SiP11203
SiP11204
SRH
SRL
INA
V
INB
GND
IN
SiP11203
SiP11204
SiP11203
SiP11204



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