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2SC3355 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC3355
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3355 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10208EJ01V0DS
3
2SC3355
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
15
10
0.5
50
VCE = 10 V
1 250
1 000
750
500
250
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Heat sink
(Aluminum)
19 mm
With heat sink
Free air
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3
0.5
0.2
1
2
5
10
30
20
f = 1 MHz
VCE = 10 V
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
0.1
1
5
10
50
0.1
0.5
100
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
10
0
5
0.5
1
10
50
570
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
25
15
20
5
10
0
0.05
0.1
0.5
1
0.2
2
MAG
|S21e|
2



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