2SC3355 datasheet(6/10 Pages) RENESAS

Part #	2SC3355

Description	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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6 / 10 page

Data Sheet PU10208EJ01V0DS

2SC3355

–90

–100

–80

–70

–60

–40

–50

–30

Collector Current IC (mA)

IM3, IM2 vs. COLLECTOR CURRENT

IM2

IM3

VCE = 10 V

Vo = 100 dB V/50

Ω

Rg = Re = 50

Ω

IM2 : f = 90 + 100 MHz

IM3 : f = 2 × 200 – 190 MHz

0.5

50 70

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 10 V

f = 1 GHz

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.csd-nec.com/

2SC3355 Datasheet(PDF) 6 Page - Renesas Technology Corp