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2SC3355 Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # 2SC3355
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3355 Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet PU10208EJ01V0DS
5
2SC3355
SMITH CHART
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
4
8
12
16 20
S21e
0.2 GHz
2.0 GHz
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 40 mA
00
50
60
70
80
90
100
110
120
130
0.18
0.16
0.14
0.12
0.10
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.32
0.34
0.36
0.38
0.40
0.42
0.33
0.35
0.37
0.39
0.41
0.43
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
0.3
0.2
0.1
0.4
50
10
6.0
4.0
3.0
20
0.2 GHz
0.2 GHz
2.0 GHz
2.0 GHz
IC = 20 mA
S22e
S11e
IC = 20 mA
IC = 40 mA
IC = 40 mA
0.2
0.4
0.6
0.8
1.0
0.2
0.8
0.6
0.4
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 40 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.1
0.2
0.3
0.4 0.5
S12e
0.2 GHz
2.0 GHz



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