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SPC564L54L5 Datasheet(PDF) 99 Page - STMicroelectronics

Part # SPC564L54L5
Description  32-bit Power Architecture® microcontroller for automotive SIL3/ASILD chassis and safety applications
PDF  160 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC564L54L5 Datasheet(HTML) 99 Page - STMicroelectronics

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SPC56XL60/54
Electrical characteristics
Doc ID 15457 Rev 8
99/160
3.4
Thermal characteristics
VDD_HV_ADV
SR 3.3 V ADC supply voltage
3.0
3.6
V
VSS_HV_AD0
VSS_HV_AD1
SR
ADC_0 ground and low reference voltage
ADC_1 ground and low reference voltage
—0
0
V
VSS_HV_ADV
SR 3.3 V ADC supply ground
0
0
V
VDD_LV_REGCOR
(3)
SR Internal supply voltage
V
VSS_LV_REGCOR
(4)
SR Internal reference voltage
0
0
V
VDD_LV_CORx
(2)
SR Internal supply voltage
V
VSS_LV_CORx
(3)
SR Internal reference voltage
0
0
V
VDD_LV_PLL
(2)
SR Internal supply voltage
V
VSS_LV_PLL
(3)
SR Internal reference voltage
0
0
V
TA
SR Ambient temperature under bias
fCPU ≤ 120 MHz
–40
125
°C
TJ
SR Junction temperature under bias
–40
150
°C
1.
Full functionality cannot be guaranteed when voltage drops below 3.0 V. In particular, ADC electrical characteristics and
I/Os DC electrical specification may not be guaranteed.
2.
VDD_HV_ADR0 and VDD_HV_ADR1 cannot be operated at different voltages, and need to be supplied by the same voltage
source.
3.
Can be connected to emitter of external NPN. Low voltage supplies are not under user control. They are produced by an
on-chip voltage regulator.
4.
For the device to function properly, the low voltage grounds (VSS_LV_xxx) must be shorted to high voltage grounds
(VSS_HV_xxx) and the low voltage supply pins (VDD_LV_xxx) must be connected to the external ballast emitter, if one is used.
Table 10.
Recommended operating conditions (3.3 V) (continued)
Symbol
Parameter
Conditions
Min(1)
Max
Unit
Table 11.
Thermal characteristics for LQFP100 package(1)
Symbol
Parameter
Conditions
Value
Unit
RθJA
D
Thermal resistance, junction-to-ambient natural
convection(2)
Single layer board – 1s
46
°C/W
Four layer board – 2s2p
34
RθJMA
D
Thermal resistance, junction-to-ambient forced
convection at 200 ft/min
Single layer board – 1s
36
°C/W
Four layer board – 2s2p
28
RθJB
D
Thermal resistance junction-to-board(3)
—19
°C/W
RθJC
D
Thermal resistance junction-to-case(4)
—8
°C/W
ΨJT
D
Junction-to-package-top natural convection(5)
—2
°C/W
1.
Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
2.
Junction-to-Ambient thermal resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets
JEDEC specification for this package.
3.
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification
for the specified package.
4.
Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is
used for the case temperature. Reported value includes the thermal resistance of the interface layer.



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