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SFP830D Datasheet(PDF) 3 Page - SemiWell Semiconductor

Part # SFP830D
Description  N-Channel MOSFET
PDF  5 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SFP830D Datasheet(HTML) 3 Page - SemiWell Semiconductor

  SFP830D Datasheet HTML 1Page - SemiWell Semiconductor SFP830D Datasheet HTML 2Page - SemiWell Semiconductor SFP830D Datasheet HTML 3Page - SemiWell Semiconductor SFP830D Datasheet HTML 4Page - SemiWell Semiconductor SFP830D Datasheet HTML 5Page - SemiWell Semiconductor  
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SFP830D
Switching Characteristics
Symbol
Items
Conditions
Min
Typ.
Max
Units
td(on)
Turn-on Delay Time
VDD = 250V, ID = 5.0A
RG = 25
(note 4,5)
10
ns
tr
Turn-on Rise Time
50
ns
td(off)
Turn-off Delay Time
50
ns
tf
Turn-off Fall Time
50
ns
Qg
Total Gate Charge
VDS = 400V, ID = 5.0A
VGS = 10V
(note 4,5)
20
nC
Qgs
Gate-Source Charge
3.5
nC
Qgd
Gate-Drain Charge
10
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source diode Forward Current
5.0
A
ISM
Maximum Pulse Drain-Source diode Forward Current
20.0
A
VSD
Drain-Source diode Forward voltage
VGS = 0V, Is = 5.0A
1.4
V
trr
Reverse Recovery Time
VGS = 0V, Is = 5.0A
dlF/dt =100 A/us
(note 4)
260
nS
Qrr
Reverse Recovery Charge
2.0
uC
Notes
1.
Repetitive Rating : Pulse width limited by maximum junction temperature
2.
L = 22mH, IAS = 5.0A, VDD = 50V, RG = 25
, starting TJ = 25℃
3.
ISD ≤ 5.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS , starting TJ = 25℃
4.
Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5.
Essentially independent of operation temperture
3/5



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