SFP830D

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Symbol

Parameter

Ratings

Units

Drain-Source Voltage

500

V

Drain Current

4.5

3

A

Gate-Source Voltage

± 20

V

Drain Current

pulse

(Note 1)

18

A

Single Pulse Avalanche Energy

(Note 2)

220

mJ

Repetitive Avalanche Energy

(Note 1)

7.5

mJ

dv/dt

Peak diode Recovery dv/dt

(Note 3)

3.5

V/ns

74

W

Operation and Storage Temperature range

-45 ~ 150

℃

N-Channel MOSFET

Features

◆

◆

Gate Charge ( Typical 20nC)

◆

Improve dv/dt capability, Fast switching

◆

100% avalanche Tested

General Description

This MOSFET is produced using advanced planar strip

DMOS

technology.

This

latest

technology

has

been

especially designed to minimize on-state resistance have a

high rugged avalanche characteristics. These device are well

suited for high efficiency switch mode power supply active

power factor correction. Electronic lamp based on half bridge

topology