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SFP830D Datasheet(PDF) 2 Page - SemiWell Semiconductor

Part # SFP830D
Description  N-Channel MOSFET
PDF  5 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SFP830D Datasheet(HTML) 2 Page - SemiWell Semiconductor

  SFP830D Datasheet HTML 1Page - SemiWell Semiconductor SFP830D Datasheet HTML 2Page - SemiWell Semiconductor SFP830D Datasheet HTML 3Page - SemiWell Semiconductor SFP830D Datasheet HTML 4Page - SemiWell Semiconductor SFP830D Datasheet HTML 5Page - SemiWell Semiconductor  
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SFP830D
Thermal Characteristics
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance Junction to Case
1.65
℃/W
RθCS
Thermal Resistance Case to Sink Typ.
0.5
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Electrical Characteristics ( TC = 25℃ Unless otherwise noted)
Symbol
Items
Conditions
Ratings
Unit
Min
Typ.
Max
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250uA
500
V
ΔBVDSS
/ΔTJ
Breakdown
Voltage
Temperature
coefficient
ID =250uA, Reference to 25℃
0.6
V/℃
IDSS
Zero gate voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TS = 125℃
1
10
uA
IGSSF
Gate body leakage current Forward
VGS = 30V, VDS = 0V
100
nA
IGSSR
Gate body leakage current Reverse
VGS = -30V, VDS = 0V
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250uA
2.0
4.0
V
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10V, ID = 2.5A
1.1
1.5
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0V
f = 1.0MHz
525
pF
Coss
output Capacitance
75
pF
Crss
Reverse Transfer Capacitance
15
pF
2/5



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