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ISL70001ASEHFE Datasheet(PDF) 20 Page - Intersil Corporation |
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ISL70001ASEHFE Datasheet(HTML) 20 Page - Intersil Corporation |
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20 / 25 page ![]() ISL70001ASEH 20 FN8365.0 May 22, 2013 Weight Characteristics Weight of Packaged Device 1.602 Grams typical - R48.A Package 2.440 Grams typical - R48.B Package Die Characteristics Die Dimensions 5720µm x 5830µm (225.2 mils x 229.5 mils) Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil) Interface Materials GLASSIVATION Type: Silicon Oxide and Silicon Nitride Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm TOP METALLIZATION Type: AlCu (0.5%) Thickness: 2.7µm ±0.4µm SUBSTRATE Type: Silicon Isolation: Junction BACKSIDE FINISH Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Package R48.A and R48.B PGND Metal Lid Potential Electrically Isolated -Package R48.A PGND - Package R48.B ADDITIONAL INFORMATION Worst Case Current Density < 2 x 105 A/cm2 Transistor Count 25030 Layout Characteristics Step and Repeat 5720µm x 5830µm Connect PGND to PGNDx |
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