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VNH5019ATR-E Datasheet(PDF) 15 Page - STMicroelectronics |
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VNH5019ATR-E Datasheet(HTML) 15 Page - STMicroelectronics |
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15 / 37 page ![]() VNH5019A-E Electrical specifications Doc ID 15701 Rev 9 15/37 Figure 4. Typical application circuit for DC to 20 kHz PWM operation with reverse battery protection (option A) M μC Reg 5V + 5V HSA HSB LSA LSB VBAT DIAGA/ENA CS INA PWM OUTA OUTB 3.3K 1K 1K 1K 10K 33nF 1.5K VCC VBAT CP DIAGB/ENB +5V 1K 3.3K INB 1K GNDA GNDB C Note: The external N-channel Power MOSFET used for the reverse battery protection should have the following characteristics: - BVdss > 20 V (for a reverse battery of -16 V); - RDS(on) < 1/3 of H-bridge total RDS(on) - Standard Logic Gate Driving |
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