VNH5019ATR-E datasheet(19/37 Pages) STMICROELECTRONICS

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VNH5019A-E

Electrical specifications

Doc ID 15701 Rev 9

19/37

2.5

Reverse battery protection

Against reverse battery condition the charge pump feature allows to use an external

N-channel MOSFET connected as shown in the typical application circuit (see

Figure 4).

As alternative option, a N-channel MOSFET connected to GND pin can be used (see typical

application circuit in figure

Figure 5).

With this configuration we recommend to short VBAT pin to VCC.

The device sustains no more than -30 A in reverse battery conditions because of the two

body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of

VNH5019A-E is pulled-down to the VCC line (approximately -1.5 V). Series resistor must be

inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the maximum

target reverse current through microcontroller I/Os, series resistor is:

Figure 7.

Definition of the delay times measurement

IOs

–

Rmax

--------------------------------

VINB

VINA,

PWM

ILOAD

tDEL

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