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STM32F217VG Datasheet(PDF) 63 Page - STMicroelectronics |
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STM32F217VG Datasheet(HTML) 63 Page - STMicroelectronics |
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63 / 173 page ![]() STM32F21xxx Electrical characteristics Doc ID 17050 Rev 8 63/173 VCAP1 Internal core voltage to be supplied externally in REGOFF mode 1.1 1.3 V VCAP2 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7 (3) LQFP64 - 444 mW LQFP100 - 434 LQFP144 - 500 LQFP176 - 526 UFBGA176 - 513 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(4) –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(4) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 1. When the ADC is used, refer to Table 63: ADC characteristics. 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and power-down operation. 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. Table 11. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Table 12. Limitations depending on the operating power supply range Operating power supply range ADC operation Maximum Flash memory access frequency (fFlashmax) Number of wait states at maximum CPU frequency (fCPUmax= 120 MHz)(1) I/O operation FSMC_CLK frequency for synchronous accesses Possible Flash memory operations VDD =1.8 to 2.1 V Conversion time up to 1 Msps 16 MHz with no Flash memory wait state 7(2) – Degraded speed performance – No I/O compensation up to 30 MHz 8-bit erase and program operations only VDD = 2.1 to 2.4 V Conversion time up to 1 Msps 18 MHz with no Flash memory wait state 6(2) – Degraded speed performance – No I/O compensation up to 30 MHz 16-bit erase and program operations |
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