STM32F217VG datasheet(64/173 Pages) STMICROELECTRONICS

64 / 173 page

Electrical characteristics

STM32F21xxx

64/173

Doc ID 17050 Rev 8

VDD = 2.4 to

2.7 V

Conversion

time up to

2 Msps

24 MHz with

no Flash

memory wait

state

4(2)

– Degraded

speed

performance

– I/O

compensation

works

up to 48 MHz

16-bit erase

and program

operations

VDD = 2.7 to

3.6 V(3)

Conversion

time up to

2 Msps

30 MHz with

no Flash

memory wait

state

3(2)

– Full-speed

operation

– I/O

compensation

works

–up to

60 MHz

when VDD =

3.0 to 3.6 V

–up to

48 MHz

when VDD =

2.7 to 3.0 V

32-bit erase

and program

operations

The number of wait states can be reduced by reducing the CPU frequency (see Figure 18).

Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the

execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state

program execution.

The voltage range for OTG USB FS can drop down to 2.7 V. However it is degraded between 2.7 and 3 V.

Table 12.

Limitations depending on the operating power supply range

Operating

power

supply

range

ADC

operation

Maximum

Flash

memory

access

frequency

(fFlashmax)

Number of wait

states at

maximum CPU

frequency

(fCPUmax=

120 MHz)(1)

I/O operation

FSMC_CLK

frequency for

synchronous

accesses

Possible

Flash

memory

operations

STM32F217VG Datasheet(PDF) 64 Page - STMicroelectronics

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