STM32F217VG datasheet(84/173 Pages) STMICROELECTRONICS

84 / 173 page

Electrical characteristics

STM32F21xxx

84/173

Doc ID 17050 Rev 8

5.3.9

Internal clock source characteristics

The parameters given in Table 29 and Table 30 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 11.

High-speed internal (HSI) RC oscillator

Figure 31.

ACCHSI versus temperature

Table 29.

HSI oscillator characteristics (1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

Factory-

calibrated

TA = –40 to 105 °C

–8

4.5

TA = –10 to 85 °C

–4

TA = 25 °C

–1

tsu(HSI)

(3)

Guaranteed by design, not tested in production.

HSI oscillator

startup time

-2.2

µs

IDD(HSI)

HSI oscillator

power consumption

-60

µA

MS19012V2

-8

-6

-4

-2

-45

-35

-25

-15

-5

105 115 125

Temperature (°C)

max

avg

min

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