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LM6172AMGWFQMLV Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LM6172AMGWFQMLV
Description  LM6172QML Dual High Speed, Low Power, Low Distortion, Voltage Feedback Amplifiers
PDF  25 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM6172AMGWFQMLV Datasheet(HTML) 5 Page - National Semiconductor (TI)

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LM6172QML
www.ti.com
SNOSAR4A – DECEMBER 2010 – REVISED OCTOBER 2011
LM6172 (±5V) ELECTRICAL CHARACTERISTICS
(1)
DC PARAMETERS (continued)
The following conditions apply, unless otherwise specified.
TJ = 25°C, V
+ = +5V, V− = −5V, V
CM = 0V & RL > 1MΩ
Sub-
Symbol
Parameter
Conditions
Notes
Min
Max
Units
groups
See (3)
25
mA
1
Sourcing RL = 100Ω
See(3)
24
mA
2, 3
IL
Output Current (Open Loop)
See (3)
-24
mA
1
Sinking RL = 100Ω
See (3)
-23
mA
2, 3
6.0
mA
1
IS
Supply Current
Both Amplifiers
7.0
mA
2, 3
(3)
The open loop output current is specified by measurement of the open loop output voltage swing using 100
Ω output load.
DC DRIFT PARAMETERS
(1)
The following conditions apply, unless otherwise specified.
TJ = 25°C, V
+ = +5V, V− = −5V, V
CM = 0V & RL > 1MΩ
Delta calculations performed on QMLV devices at group B , subgroup 5.
Sub-
Symbol
Parameter
Conditions
Notes
Min
Max
Units
groups
VIO
Input Offset Voltage
-0.25
0.25
mV
1
IIB
Input Bias Current
-0.50
0.50
µA
1
IIO
Input Ofset Current
-0.25
0.25
µA
1
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
LM6172 (±15V) ELECTRICAL CHARACTERISTICS
DC PARAMETERS
(1)
The following conditions apply, unless otherwise specified.
TJ = 25°C, V
+ = +15V, V− = −15V, V
CM = 0V, & RL = 1MΩ
Sub-
Symbol
Parameter
Conditions
Notes
Min
Max
Units
groups
1.5
mV
1
VIO
Input Offset Voltage
3.5
mV
2, 3
3.0
µA
1
IIB
Input Bias Current
4.0
µA
2, 3
2.0
µA
1
IIO
Input Offset Current
3.0
µA
2, 3
70
dB
1
CMRR
Common Mode Rejection Ratio
VCM = ±10V
65
dB
2, 3
75
dB
1
PSRR
Power Supply Rejection Ratio
VS = ±15V to ±5V
70
dB
2, 3
See (2)
75
dB
1
RL = 1KΩ
See (2)
70
dB
2, 3
AV
Large Signal Voltage Gain
See (2)
65
dB
1
RL = 100Ω
See (2)
60
dB
2, 3
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A.
(2)
Large signal voltage gain is the total output swing divided by the input signal required to produce that swing. For VS = ±15V, VOUT =
±5V. For VS = ±5V, VOUT = ±1V.
Copyright © 2010–2011, Texas Instruments Incorporated
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