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DS80C320 Datasheet(PDF) 25 Page - Dallas Semiconductor |
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DS80C320 Datasheet(HTML) 25 Page - Dallas Semiconductor |
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25 / 42 page ![]() DS80C320/DS80C323 25 of 42 DS80C320 AC CHARACTERISTICS UP TO 33 MHz PARAMETER SYMBOL 33 MHz MIN 33 MHz MAX VARIABLE CLOCK MIN VARIABLE CLOCK MAX UNITS Oscillator Frequency (Ext. Osc.) (Ext. Crystal) 1/tCLCL 0 1 33 33 0 1 33 33 MHz ALE Pulse Width tLHLL 35 1.5tCLCL-10 ns Port 0 Address Valid to ALE Low tAVLL 4 0.5tCLCL-11 ns Address Hold After ALE Low tLLAX1 2 note 5 0.25tCLCL-5 note 5 ns Address Hold After ALE Low for MOVX WR tLLAX2 8 0.5tCLCL-7 ns ALE Low to Valid Instruction In tLLIV 49 2.5tCLCL-27 ns ALE Low to PSEN Low tLLPL 0.5 0.25tCLCL-7 ns PSEN Pulse Width tPLPH 61 2.25tCLCL-7 ns PSEN Low to Valid Instruction In tPLIV 48 2.25tCLCL-21 ns Input Instruction Hold After PSEN tPXIX 0 0 ns Input Instruction Float After PSEN tPXIZ 25 tCLCL-5 ns Port 0 Address to Valid Instruction In tAVIV1 64 3tCLCL-27 ns Port 2 Address to Valid Instruction In tAVIV2 73 3.5tCLCL-33 ns PSEN Low to Address Float tPLAZ note 5 note 5 ns NOTES FOR DS80C323 AC ELECTRICAL CHARACTERISTICS: All parameters apply to both commercial and industrial temperature range operation unless otherwise noted. AC timing characteristics valid for oscillator frequency > 16 MHz. 1. All signals rated over operating temperature at 33 MHz. 2. All signals characterized with load capacitance of 80 pF except Port 0, ALE, PSEN , RD and WR at 100 pF. Note that loading should be approximately equal for valid timing. 3. Interfacing to memory devices with float times (turn off times) over 30 ns may cause contention. This will not damage the parts but will cause an increase in operating current. 4. Specifications assume a 50% duty cycle for the oscillator. Port 2 timing will change with the duty cycle variations. 5. Address is held in a weak latch until over driven by external memory. |
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