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DS80C320 Datasheet(PDF) 25 Page - Dallas Semiconductor

Part # DS80C320
Description  High-Speed/Low-Power Micro
PDF  42 Pages
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Manufacturer  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS80C320 Datasheet(HTML) 25 Page - Dallas Semiconductor

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DS80C320/DS80C323
25 of 42
DS80C320 AC CHARACTERISTICS UP TO 33 MHz
PARAMETER
SYMBOL
33 MHz
MIN
33 MHz
MAX
VARIABLE
CLOCK
MIN
VARIABLE
CLOCK
MAX
UNITS
Oscillator Frequency
(Ext. Osc.)
(Ext. Crystal)
1/tCLCL
0
1
33
33
0
1
33
33
MHz
ALE Pulse Width
tLHLL
35
1.5tCLCL-10
ns
Port 0 Address Valid
to ALE Low
tAVLL
4
0.5tCLCL-11
ns
Address Hold After
ALE Low
tLLAX1
2
note 5
0.25tCLCL-5
note 5
ns
Address Hold After
ALE Low for MOVX WR
tLLAX2
8
0.5tCLCL-7
ns
ALE Low to Valid
Instruction In
tLLIV
49
2.5tCLCL-27
ns
ALE Low to PSEN Low
tLLPL
0.5
0.25tCLCL-7
ns
PSEN
Pulse Width
tPLPH
61
2.25tCLCL-7
ns
PSEN
Low to Valid
Instruction In
tPLIV
48
2.25tCLCL-21
ns
Input Instruction Hold
After PSEN
tPXIX
0
0
ns
Input Instruction Float
After PSEN
tPXIZ
25
tCLCL-5
ns
Port 0 Address to Valid
Instruction In
tAVIV1
64
3tCLCL-27
ns
Port 2 Address to Valid
Instruction In
tAVIV2
73
3.5tCLCL-33
ns
PSEN
Low to
Address Float
tPLAZ
note 5
note 5
ns
NOTES FOR DS80C323 AC ELECTRICAL CHARACTERISTICS:
All parameters apply to both commercial and industrial temperature range operation unless otherwise
noted. AC timing characteristics valid for oscillator frequency > 16 MHz.
1. All signals rated over operating temperature at 33 MHz.
2. All signals characterized with load capacitance of 80 pF except Port 0, ALE, PSEN , RD and WR at
100 pF. Note that loading should be approximately equal for valid timing.
3. Interfacing to memory devices with float times (turn off times) over 30 ns may cause contention. This
will not damage the parts but will cause an increase in operating current.
4. Specifications assume a 50% duty cycle for the oscillator. Port 2 timing will change with the duty
cycle variations.
5. Address is held in a weak latch until over driven by external memory.



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