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VND830ASP-E Datasheet(PDF) 7 Page - STMicroelectronics |
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VND830ASP-E Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 27 page ![]() VND830ASP-E Electrical specifications Doc ID 17605 Rev 2 7/27 2.2 Thermal data VESD Electrostatic discharge (Human Body Model: R=1.5 Ω; C=100pF) – INPUT – CURRENT SENSE –OUTPUT –VCC 4000 2000 5000 5000 V V V V EMAX Maximum switching energy (L = 1.8 mH; RL =0 Ω; Vbat=13.5V; Tjstart = 150 °C; IL =9A) 100 mJ Ptot Power dissipation at Tc =25°C 74 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C Table 2. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.3 °C/W Rthj-amb Thermal resistance junction-ambient 51.2(1) 1. When mounted on a standard single sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. °C/W |
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