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VND830ASP-E Datasheet(PDF) 18 Page - STMicroelectronics

Part # VND830ASP-E
Description  Double channel high-side solid state relay
PDF  27 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND830ASP-E Datasheet(HTML) 18 Page - STMicroelectronics

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Application information
VND830ASP-E
18/27
Doc ID 17605 Rev 2
3.1.2
Solution 2: diode (DGND) in the ground line
A resistor (RGND = 1 kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (
∼600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected, while
unused SENSE pin has to be connected to ground pin.
3.2
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in Table 11.
3.3
MCU I/Os protection
If a ground protection network is used and negative transient are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak = -100 V and Ilatchup ≥ 20 mA; VOHµC ≥ 4.5 V
5k
Ω ≤ Rprot ≤ 65 kΩ.
Recommended values:
Rprot =10 kΩ.



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