MS7N80 datasheet(2/6 Pages) BWTECH

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MS7N80

800V N-Channel MOSFET

Publication Order Number: [MS7N80]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Total Power Dissipation(@TC = 25 °C) 44 W

Derating Factor above 25 °C

0.44

W/°C

TSTG

Operating and Storage Temperature

-55 to +150

°C

Storage Temperature

300

°C

• Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

0.75

°C/W

RθJA

Junction-to-Ambient

62.5

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS,ID = 250μA

3.0

5.0

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V,ID = 3.5 A

1.7

2.1

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0 V , ID = 250μA

800

△BV

DSS

△T

Breakdown Voltage

Temperature Coefficient

ID = 250μA, Referenced to 25°C

0.92

V/°C

IDSS

Zero Gate Voltage Drain

Current

VDS = 800 V , VGS = 0 V

VDS = 640 V , TC = 125°C

100

μA

IGSSF

Gate-Body Leakage

Current, Forward

VGS = 30 V , VDS = 0 V

100

IGSSR

Gate-Body Leakage

Current, Reverse

VGS = -30 V , VDS = 0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 25 V, VGS = 0 V,

f=1.0MHz

1700

COSS

Output Capacitance

155

CRSS

Reverse Transfer Capacitance

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