MS7N80 datasheet(3/6 Pages) BWTECH

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MS7N80

800V N-Channel MOSFET

Publication Order Number: [MS7N80]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Time

VDS = 400 V, ID = 7 A,

RG = 25 Ω

Turn-On Time

100

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS = 640 V,ID = 10 A,

VGS = 7 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

7.0

ISM

ISM Pulsed Source-Drain Diode Forward Current

VSD

Source-Drain Diode Forward Voltage

IS = 7 A , VGS = 0 V

1.4

trr

Reverse Recovery Time

IS = 7 A , VGS = 0 V

diF/dt=100A/μs

650

Qrr

Reverse Recovery Charge

μC

Notes;

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=18mH, IAS=7A, VDD=5V, RG=25Ω, Starting TJ=25℃

3. ISD≦7A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width

≦ 300μs, Duty Cycle≦ 2%

5. Essentially Independent of Operating Temperature

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