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IRF7MS2907 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7MS2907 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 45* IDM Pulsed Drain Current ➀ 180 PD @ TC = 25°C Max. Power Dissipation 208 W Linear Derating Factor 1.67 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 760 mJ IAR Avalanche Current ➀ 45 A EAR Repetitive Avalanche Energy ➀ 20.8 mJ dv/dt Peak Diode Recovery dv/dt ➂ 2.2 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 4.3 (Typical) g oC A 04/14/03 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF7MS2907 75V 0.0055 Ω 45A* For footnotes refer to the last page HEXFET® POWER MOSFET IRF7MS2907 THRU-HOLE (Low-ohmic TO-254AA) 75V, N-CHANNEL Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight TO-254AA * Current is limited by package Low-Ohmic PD - 94609 |
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Similar Description - IRF7MS2907 |
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