UTT60N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-575.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

60

A

Continuous Drain Current

39

A

Drain Current Pulsed (Note 2)

120

A

Avalanche Energy

Single Pulsed

100

mJ

TO-220/TO-263

100

W

TO-252

70

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repeativity rating: pulse width limited by junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-263

62.5

°C/W

Junction to Ambient

TO-252

110

°C/W

TO-220/TO-263

1.25

°C/W

Junction to Case

TO-252

1.8

°C/W