UTT60N06G-TN3-R datasheet(3/8 Pages) UTC

3 / 8 page

UTT60N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-575.D



ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

Drain-Source Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

μA

Forward

VGS = 20V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -20V, VDS = 0 V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 30 A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

2000

Output Capacitance

COSS

400

Reverse Transfer Capacitance

CRSS

VGS = 0V, VDS =25V, f = 1MHz

115

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Rise Time

Turn-Off Delay Time

tD(OFF)

Fall Time

VDD=48V, ID=60A, RL=0.5Ω,

VGS=10V (Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

Gate-Drain Charge (Miller Charge)

QGD

VDS = 30V, VGS = 10 V

ID = 60A (Note 1, 2)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0 V, IS = 60A

1.6

Continuous Source Current

Pulsed Source Current

ISM

120

Reverse Recovery Time

tRR

Reverse Recovery Charge

QRR

IS = 60A, VGS = 0 V,

dIF/dt = 100 A/μs (Note 1)

3.4

μC

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature.

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