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UTT60N06G-TN3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UTT60N06G-TN3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 8 page  UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-575.D N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) < 18mΩ @VGS = 10 V * Fast switching capability * Avalanche energy Specified SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UTT60N06L-TA3-T UTT60N06G-TA3-T TO-220 G D S Tube UTT60N06L-TN3-R UTT60N06G-TN3-R TO-252 G D S Tape Reel UTT60N06L-TQ2-T UTT60N06G-TQ2-T TO-263 G D S Tube UTT60N06L-TQ2-R UTT60N06G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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