11

12

13

14

SMBus

Master

* Note, place close to LM95233 pins.

** Note, optional - place close to LM95233 pins.

LM95233

1

2

3

4

NC

NC

NC

SMBCLK

C1*

100 pF

C2

0.1 PF

SMBCLK

SMBDAT

C5**

100 pF

+3.3V

Standby

R4

1.3k

R5

1.3k

D-

D2+

D1+

5

6

7

8

9

10

A0

SMBDAT

PROCESSOR

Q1

MMBT3904

C4**

100 pF

R3

10k

R2

10k

R1

10k

SO

DIMM

C3

10 PF

TCRIT2

TCRIT1

TCRIT3

GND

LM95233

SNIS145E – AUGUST 2006 – REVISED MARCH 2013

www.ti.com

Typical Application

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

Supply Voltage

−0.3V to 6.0V

Voltage at SMBDAT, SMBCLK,

TCRIT1, TCRIT2, TCRIT3

−0.5V to 6.0V

Voltage at Other Pins

D

− Input Current

±1 mA

±5 mA

30 mA

SMBDAT, TCRIT1, TCRIT2,

TCRIT3 Output Sink Current

10 mA

Storage Temperature

−65°C to +150°C

Human Body Model

2000V

Machine Model

200V

Charge Device Model

1000V

Soldering process must comply with Texas Instruments' reflow temperature profile specifications. Refer to SNOA549 (4)

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not

apply when operating the device beyond its rated operating conditions.

(2)

5 mA. Parasitic components and or ESD protection circuitry are shown in the table below for the LM95233's pins.

(3)

Human body model, 100 pF discharged through a 1.5 k

Ω resistor. Machine model, 200 pF discharged directly into each pin. Charged

Device Model (CDM) simulates a pin slowly acquiring charge (such as from a device sliding down the feeder in an automated

assembler) then rapidly being discharged.

(4)

Reflow temperature profiles are different for packages containing lead (Pb) than for those that do not.

4

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