DMN67D8LDW

Document number: DS38034 Rev. 1 - 2

2 of 6

www.diodes.com

August 2015

© Diodes Incorporated

DMN67D8LDW

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±30

V

Steady

State

230

180

mA

Maximum Continuous Body Diode Forward Current (Note 6)

0.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)

0.8

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

320

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

400

°C/W

Total Power Dissipation (Note 6)

410

mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

312

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1.0

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

—

2.5

V

Static Drain-Source On-Resistance

—

1.5

3.2

5.0

7.5

Ω

Forward Transfer Admittance

80

—

—

mS

Diode Forward Voltage

—

0.78

1.5

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

22

—

pF

f = 1.0MHz

Output Capacitance

—

4.1

—

pF

Reverse Transfer Capacitance

—

2.5

—

pF

Gate Resistance

—

120

—

Ω

—

361

—

pC

—

821

—

pC

Gate-Source Charge

—

162

—

pC

Gate-Drain Charge

—

116

—

pC

Turn-On Delay Time

—

2.8

—

ns

Turn-On Rise Time

—

3.0

—

ns

Turn-Off Delay Time

—

7.6

—

ns

Turn-Off Fall Time

—

5.6

—

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.