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PAM8902H Datasheet(PDF) 4 Page - Diodes Incorporated |
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PAM8902H Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 12 page ![]() PAM8902H Document number: DSxxxxx Rev. 1 - 0 4 of 12 www.diodes.com December 2012 © Diodes Incorporated PAM8902H A Product Line of Diodes Incorporated Thermal Information Parameter Symbol Package Maximum Unit Thermal Resistance (Junction to Ambient) θJA CSP 90 °C/W QFN4x4-16 52 Thermal Resistance (Junction to Case) θJC CSP 72 °C/W QFN4x4-16 30 Electrical Characteristics (@TA = +25°C, VDD = 3.6V, CL = 1µF, VSET Float, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VDD Input Voltage 2.5 5.5 V IQ Quiescent Current EN > 1.2V, VSET = High 30 48 mA EN > 1.2V, VSET = Floating 10 18 EN > 1.2V, VSET = GND 5 12 ISD Shutdown Current EN = 0V 0.1 1.0 µA TWU Wake-Up Time EN From Low to High 40 mS VEH Chip Enable 1.2 V VEL Chip Disable 0.4 VH GSET/VSET High VDD -0.5 VDD V VF GSET/VSET Floating 1 VDD -1 VL GSET/VSET Low 0 0.5 UVLO Under Voltage Lockout Threshold VDD From High to Low 2.2 V UVLOH Under Voltage Lockout Hysteresis VDD From Low to High 0.2 OTP Thermal Shutdown Threshold 150 °C OTPH Thermal Shutdown Lockout Hysteresis 30 °C Boost Converter VO1 Output Voltage VSET = GND, No Load 7.2 8.0 8.8 V VO2 VSET = NC, No Load 10.8 12.0 13.2 V VO3 VSET = AVDD, No Load 16 17.5 19 V CL Current Limit Average Input Current 1.0 A RLS Low Side MOSFET RDS(ON) IO = 50mA 0.5 Ω fOSCB Boost Switching Frequency 1.1 1.5 1.9 MHz Class-D fOSCD Class-D Amplifier Switching Frequency Input AC-GND 225 375 475 KHz CMRR Common Mode Reject Ratio VIN = ±100mV, VDD = 3.6V 60 dB VOS Output Offset Voltage Output Offset Voltage 5 50 mV RP RDS(ON) High Side 1.5 Ω Low Side 0.6 Ω AV1 Closed-Loop Voltage Gain GSET = AVDD, VO = 1VRMS 32.5 dB AV2 GSET = AVDD, VO = 1VRMS 26 AV3 GSET = AVDD, VO = 1VRMS 21 PSRR Power Supply Reject Ratio 200m VPP Supply Ripple @ 217Hz 70 dB THD+N Total Harmonice Distortion Plus Noise VO = 5VRMS 0.3 % SNR Signal to Noise Ratio Input AC Ground, A-Weighting 90 dB |
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