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STL8DN10LF3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL8DN10LF3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  This is information on a product in full production. July 2015 DocID023009 Rev 6 1/15 STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 m Ω typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Logic level VGS(th) • 175 °C maximum junction temperature • 100% avalanche rated • Wettable flank package Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Order code VDS RDS(on) max ID STL8DN10LF3 100 V 35 m Ω 7.8 A Table 1. Device summary Order code Marking Packages Packing STL8DN10LF3 8DN10LF3 PowerFLAT™ 5x6 double island Tape and reel www.st.com |
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