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STL8DN10LF3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL8DN10LF3
Description  Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 double island package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL8DN10LF3 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID023009 Rev 6
3/15
STL8DN10LF3
Electrical ratings
15
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID
(1),(2)
1.
Specified by design. Not subject to production test.
2.
Current is limited by bonding, with an RthJC = 2.1 °C/W the chip is able to carry 32 A at 25 °C.
Drain current (continuous) at TC = 25 °C
20
A
ID
Drain current (continuous) at TC = 100 °C
20
A
ID
(4)
Drain current (continuous) at Tpcb = 25 °C
7.8
A
ID
(4)
Drain current (continuous) at Tpcb=100 °C
5.5
A
IDM
(3),(4)
3.
Pulse width limited by safe operating area.
4.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Drain current (pulsed)
31.2
A
PTOT
Total dissipation at TC = 25°C
70
W
PTOT
(4)
Total dissipation at Tpcb = 25°C
4.3
W
IAV
Not-repetitive avalanche current
7.8
A
EAS
(5)
5.
Starting TJ= 25 °C, ID= 7.8 A, VDD= 25 V
Single pulse avalanche energy
190
mJ
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.1
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
35
°C/W



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