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STL8DN10LF3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL8DN10LF3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() DocID023009 Rev 6 5/15 STL8DN10LF3 Electrical characteristics 15 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 7.8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 31.2 A VSD (2) 2. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Forward on voltage ISD = 7.8 A, VGS=0 - 1.3 V trr Reverse recovery time ISD = 7.8 A, di/dt = 100 A/µs, VDD=48 V, Tj=150 °C -42.5 ns Qrr Reverse recovery charge - 87 nC IRRM Reverse recovery current - 4.08 A |
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