STL40N10F7 datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STL40N10F7

Description	Among the lowest RDS on the market

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

December 2015

DocID024671 Rev 3

1/15

This is information on a product in full production.

www.st.com

STL40N10F7

N-

channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7

Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STL40N10F7

100 V

0.024Ω

10 A

5 W



Among the lowest RDS(on) on the market



Excellent figure of merit (FoM)



Low Crss/Ciss ratio for EMI immunity



High avalanche ruggedness

Applications



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

Packing

STL40N10F7

40N10F7

PowerFLAT

TM 5x6

Tape and reel

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