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SSM5G06FE Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # SSM5G06FE
Description  Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM5G06FE Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM5G06FE
2014-03-01
4
SBD
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1 mA
⎯
0.18
⎯
V
VF (2)
IF = 5 mA
⎯
0.23
0.30
V
Forward voltage
VF (3)
IF = 100 mA
⎯
0.35
0.50
V
Reverse current
IR
VR = 12 V
⎯
⎯
22
μA
Total capacitance
CT
VR = 0 V, f = 1 MHz
⎯
20
40
pF
Precaution
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.



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