SSM5G06FE datasheet(3/8 Pages) TOSHIBA

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SSM5G06FE

2014-03-01

MOSFET

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = − 0.1 mA, VGS = 0 V

−20

⎯

Drain Cut-off current

IDSS

VDS = − 20 V, VGS = 0 V

⎯

−1

μA

Gate threshold voltage

Vth

VDS = − 3 V, ID = − 0.1 mA

−0.6

⎯

−1.1

Forward transfer admittance

⏐Yfs⏐

VDS = − 3 V, ID = − 10 mA

(Note 4)

⎯

ID = − 10 mA, VGS = − 4 V

(Note 4)

⎯

ID = − 10 mA, VGS = − 2.5 V

(Note 4)

⎯

Drain-Source on-resistance

RDS (ON)

ID = − 1 mA, VGS = − 1.5 V

(Note 4)

⎯

Input capacitance

Ciss

VDS = − 3 V, VGS = 0 V, f = 1 MHz

⎯

Reverse transfer capacitance

Crss

VDS = − 3 V, VGS = 0 V, f = 1 MHz

⎯

3.7

⎯

Output capacitance

Coss

VDS = − 3 V, VGS = 0 V, f = 1 MHz

⎯

Turn-on time

ton

⎯

130

⎯

Switching time

Turn-off time

toff

VDD = − 3 V, ID = − 10 mA,

VGS = 0 to − 2.5 V

⎯

190

⎯

Note 4: Pulse test

Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 µA for

this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(Relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration for using the device.

VDD = −3 V

Duty

≤ 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

= 25°C

−2.5V

μs

VDD

OUT

ton

10%

90%

−2.5 V

0 V

90%

10%

toff

VDS (ON)

VDD

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