LM9061MXSLASHNOPB datasheet(11/33 Pages) TI1

11 / 33 page

LM9061, LM9061-Q1

www.ti.com

SNOS738H – APRIL 1995 – REVISED JANAURY 2015

7 Detailed Description

7.1 Overview

The LM9061 is a high-side controller that can protect the load from overcurrent and overvoltage. An internal

charge pump circuit generates the gate voltage to drive the high-side MOSFET. The voltage drop, VDS, across

the MOSFET is monitored to protect from excessive current. Should the VDS voltage, due to excessive load

current, exceed the threshold voltage, the output is latched OFF after a programmable delay time interval.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 MOSFET Gate Drive

The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to

provide the gate drive to high-side MOSFET transistors. Any size of N-channel power MOSFET, including

multiple parallel connected MOSFETs for very high current applications, can be used to apply power to a ground

referenced load circuit in what is referred to as “high-side drive” applications. Figure 12 shows the basic

application of the LM9061.

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LM9061MX/NOPB Datasheet(PDF) 11 Page - Texas Instruments