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MSD39N08 Datasheet(PDF) 1 Page - Bruckewell Technology LTD |
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MSD39N08 Datasheet(HTML) 1 Page - Bruckewell Technology LTD |
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1 / 6 page  MSD39N08 30V N-Channel MOSFETs Publication Order Number: [MSD39N08] © Bruckewell Technology Corporation Rev. A -2014 Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V, 55A, RDS(ON) =9 mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR Packing & Order Information Shipping：80/Tube ; 2,500/Box TO-252 Package Graphic symbol |
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