MSD39N08 datasheet(2/6 Pages) BWTECH

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MSD39N08

30V N-Channel MOSFETs

Publication Order Number: [MSD39N08]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

Drain Current - Continuous (TC=25°C)

Drain Current - Continuous (TC=100°C)

IDM

Drain Current - Pulsed

220

EAS

Single Pulse Avalanche Energy

IAS

Single Pulse Avalanche Current

Power Dissipation (TC=25°C)

Power Dissipation - Derate above 25°C

0.32

W/°C

Operating Junction Temperature Range

-55 to +150

°C

TSTG

Storage Temperature Range

-55 to +150

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RΘjA

Thermal Resistance Junction to ambient

°C/W

RθJC

Thermal Resistance Junction to Case

3.1

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Static State Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = VGS, ID = 250uA

△BV

DSS

△TJ

BVDSS Temperature Coefficient

Reference to 25°C , ID = 1mA

0.04

V/°C

IGSS

Gate-Source Leakage Current

VDS = 0 V , VGS = ±20 V

±100

IDSS

Drain-Source Leakage Current

VDS = 30 V , VGS = 0 V , TJ= 25°C

VDS = 24 V , VGS = 0 V , TJ= 125°C

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 16 A

VGS = 4.5 V , ID = 8 A

7.5

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID =-250μA

1.6

2.5

△V

GS(th)

V GS(th) Temperature Coefficient

VDS = VGS, ID =-250μA

-4

mV/°C

gfs

Forward Tranconductance

VDS = 10 V , ID = 8 A

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