MSD39N08 datasheet(3/6 Pages) BWTECH

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MSD39N08

30V N-Channel MOSFETs

Publication Order Number: [MSD39N08]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

3,4

VDS = 15 V , ID = 20 A,

VGS = 4.5 V

7.5

Qgs

Gate-Source Charge

3,4

1.3

Qgd

Gate-Drain Charge

3,4

4.5

td(on)

Turn-On Delay Time

3,4

ID = 15 A , RG = 3.3 Ω,

VGS = 10 V , VDD = 15 V

4.8

Rise Time

3,4

12.5

td(off)

Turn-Off Delay Time

3,4

27.6

Fall Time

3,4

8.2

CISS

Input Capacitance

VDS = 25 V

f = 1 MHz , VGS = 0 V

750

COSS

Output Capacitance

150

CRSS

Reverse Transfer Capacitance

110

Gate Charge

VDS = 0 V , f = 1 MHz , VGS = 0 V

2.7

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

EAS

Single Pulse Avalanche

Energy

VDD = 25 V,L = 0.1mH, IAS = 15 A

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source Current

VG = VD = 0 V , Force Current

ISM

Pulsed Source Current

220

VSD

Diode Forward Voltage

VGS = 0 V , IS = 1 A , TJ = 25°C

Trr

Reverse Recovery Time

VGS=0V,IS=1A , di/dt=100A/μs

TJ=25°C

Qrr

Reverse Recovery Charge

Note :

1.Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25

Ω,Starting TJ=25℃.

3.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

4.Essentially independent of operating temperature.

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