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MSC39N02X Datasheet(PDF) 1 Page - Bruckewell Technology LTD

Part # MSC39N02X
Description  30V N-Channel MOSFETs
PDF  6 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MSC39N02X Datasheet(HTML) 1 Page - Bruckewell Technology LTD

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MSC39N02X
30V N-Channel MOSFETs
Publication Order Number: [MSC39N02X]
© Bruckewell Technology Corporation Rev. A -2016
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 30V,130A, RDS(ON) =1.6
mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• Green Device Available
• RoHS compliant package
Applications
• MB / VGA / Server Vcore
• POL Applications
• SMPS 2nd SR
• BMS System
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous (TC=25°C) (Chip Limitation)
130
A
Drain Current - Continuous (TC=100°C) (Chip Limitation)
82
A
IDM
Drain Current - Pulsed
1
520
A
EAS
Single Pulse Avalanche Energy
2
245
mJ


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