MSC39N02X datasheet(2/6 Pages) BWTECH

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MSC39N02X

30V N-Channel MOSFETs

Publication Order Number: [MSC39N02X]

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

IAS

Single Pulse Avalanched Current

Power Dissipation (TC=25°C)

166

Power Dissipation - Derate above 25°C

1.33

W/°C

Operating Junction Temperature Range

-55 to +175

°C

TSTG

Storage Temperature Range

-55 to +175

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RΘjA

Thermal Resistance Junction to ambient

°C/W

RθJC

Thermal Resistance Junction to Case

0.9

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Static State Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = VGS, ID = 250uA

IGSS

Gate-Source Leakage Current

VDS = 0 V , VGS = ±20 V

±100

IDSS

Drain-Source Leakage Current

VDS = 27 V , VGS = 0 V , TJ= 25°C

VDS = 24 V , VGS = 0 V , TJ= 125°C

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 30 A

VGS = 4.5 V , ID = 15 A

1.2

1.8

1.6

2.4

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID =-250μA

1.6

2.5

gfs

Forward Tranconductance

VDS = 10 V , ID = 15 A

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

3,4

VDS = 15 V , ID = 10 A,

VGS = 4.5 V

120

Qgs

Gate-Source Charge

3,4

Qgd

Gate-Drain Charge

3,4

CISS

Input Capacitance

VDS = 25 V

f = 1 MHz , VGS = 0 V

7720

11000

COSS

Output Capacitance

945

1400

CRSS

Reverse Transfer Capacitance

435

650

Total Gate Charge

VDS = 0 V , f = 1 MHz , VGS = 0 V

1.2

2.4

td(on)

Turn-On Delay Time

3,4

ID = 10 A , RG = 10 Ω,

VGS = 10 V , VDD = 20 V

24.6

Rise Time

3,4

62.8

120

td(off)

Turn-Off Delay Time

3,4

224

440

Fall Time

3,4

162

320

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