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MSC39N02X Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MSC39N02X Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 6 page ![]() MSC39N02X 30V N-Channel MOSFETs Publication Order Number: [MSC39N02X] © Bruckewell Technology Corporation Rev. A -2016 Static State Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=30A 45 mJ Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source Current VG = VD = 0 V , Force Current -- -- 130 A ISM Pulsed Source Current 3 -- -- 260 A VSD Diode Forward Voltage 3 VGS = 0 V , IS = 1 A , TJ = 25°C -- -- 1 V Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=1mH,IAS=70A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. |
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