Data Sheet

7

Rev. 1.0 2015-11-02

TLS810B1LDV50

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Table 1

1) Not subject to production testing, specified by design.

Parameter

Symbol

Values

Unit

Note or

Test Condition

Number

Min.

Typ.

Max.

Voltage Input I, Enable EN

Voltage

-0.3

–

45

V

–

P_4.1.1

Voltage Output Q

Voltage

-0.3

–

7

V

–

P_4.1.2

Temperatures

Junction Temperature

-40

–

150

°C

–

P_4.1.3

Storage Temperature

-55

–

150

°C

–

P_4.1.4

ESD Absorption

ESD Susceptibility to GND

–

2

kV

2) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)

P_4.1.5

ESD Susceptibility to GND

–

750

V

3) ESD susceptibility, Charged Device Model “CDM” according JEDEC JESD22-C101

P_4.1.6