AS4C64M16D3 datasheet(21/89 Pages) ALSC

21 / 89 page

AS4C64M16D3

Confidential

Rev. 3.0

Aug. /2014

Table 9. Absolute Maximum DC Ratings

Symbol

Parameter

Rating

Unit

Note

VDD

Voltage on VDD pin relative to Vss

-0.4 ~ 1.8

1,3

VDDQ

Voltage on VDDQ pin relative to Vss

-0.4 ~ 1.8

1,3

VIN, VOUT

Voltage on any pin relative to Vss

-0.4 ~ 1.8

TSTG

Storage temperature

- 55~100

°C

1,2

NOTE1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

NOTE2: Storage Temperature is the case surface temperature on the center/top side of the DRAM.

NOTE3: VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ,

when VDD and VDDQ are less than 500mV; Vref may be equal to or less than 300mV.

Table 10. Temperature Range

Symbol

Parameter

Rating

Unit

Note

TOPER

Normal Operating Temperature Range

0~85

°C

1-2

Extended Temperature Range

85~95

°C

1-3

Industrial Temperature Range

-40~95

°C

1-4

NOTE1: Operating temperature is the case surface temperature on center/top of the DRAM.

NOTE2: The operating temperature range is the temperature where all DRAM specification will be supported.

Outside of this temperature range, even if it is still within the limit of stress condition, some deviation on portion of

operating specification may be required. During operation, the DRAM case temperature must be maintained

between 0-85 ° C under all other specification parameter. Supporting 0 - 85 °C with full JEDEC AC & DC

specifications.

NOTE3: Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C

case temperature. Full specifications are guaranteed in this range, but the following additional apply.

a) Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us. It is

also possible to specify a component with 1x refresh (tREFI to 7.8us) in the Extended Temperature Range.

b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the

Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6=0 and MR2 A7=1) or enable

the optional Auto Self-Refresh mode (MR2 A6=1 and MR2 A7=0).

NOTE4: During Industrial Temperature Operation Range, the DRAM case temperature must be maintained between

-40°C~95°C under all operating Conditions.

Table 11. Recommended DC Operating Conditions

Symbol

Parameter

Operation

Voltage

Rating

Units

Note

Min.

Typ.

Max

VDD

Supply Voltage

1.35V

1.283

1.35

1.45

1,2,3

1.5V

1.425

1.5

1.575

1,2,3

VDDQ

Supply Voltage for Output

1.35V

1.283

1.35

1.45

1,2,3

1.5V

1.425

1.5

1.575

1,2,3

NOTES:

1. Under all conditions VDDQ must be less than or equal to VDD

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

3. VDD & VDDQ rating are determined by operation voltage.

AS4C64M16D3 Datasheet(PDF) 21 Page - Alliance Semiconductor Corporation

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