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AS4C64M16D3 Datasheet(PDF) 39 Page - Alliance Semiconductor Corporation

Part # AS4C64M16D3
Description  AS4C64M16D3
PDF  89 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
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AS4C64M16D3 Datasheet(HTML) 39 Page - Alliance Semiconductor Corporation

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AS4C64M16D3
Confidential
39
Rev. 3.0
Aug. /2014
 Write Leveling
For better signal integrity, DDR3 memory adopted fly by topology for the commands, addresses, control signals,
and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect,
causes flight time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller
to maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in
DDR3 SDRAM to compensate the skew.
The memory controller can use the “write leveling” feature and feedback from the DDR3 SDRAM to adjust the
DQS – DQS# to CK – CK# relationship. The memory controller involved in the leveling must have adjustable
delay setting on DQS – DQS# to align the rising edge of DQS – DQS# with that of the clock at the DRAM pin.
DRAM asynchronously feeds back CK – CK#, sampled with the rising edge of DQS – DQS#, through the DQ bus.
The controller repeatedly delays DQS – DQS# until a transition from 0 to 1 is detected. The DQS – DQS# delay
established though this exercise would ensure tDQSS specification.
Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine
the actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS- DQS# signals.
Depending on the actual tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better
than the absolute limits provided in “AC Timing Parameters” section in order to satisfy tDSS and tDSH
specification.
DQS/DQS# driven by the controller during leveling mode must be determined by the DRAM based on ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations X16.
On a X16 device, both byte lanes should be leveled independently. Therefore, a separate feedback mechanism
should be available for each byte lane. The upper data bits should provide the feedback of the upper diff_DQS
(diff_UDQS) to clock relationship whereas the lower data bits would indicate the lower diff_DQS (diff_LDQS) to
clock relationship.
Figure 13. Write Leveling Concept
CK#
T1
T2
T3
T4
T5
T6
T7
T0
CK
Diff_DQS
DQ
Source
Destination
T0
T1
T2
T3
T4
T5
T6
Tn
CK#
CK
Diff_DQS
0
0
DQ
Diff_DQS
1
1
Push DQS to capture
0-1 transition
0 or 1
0 or 1
0
1



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