VND7004AY datasheet(8/47 Pages) STMICROELECTRONICS

8 / 47 page

Electrical specification

VND7004AY

8/47

DocID027772 Rev 9

Symbol

Parameter

Value

Unit

ISENSE

MultiSense pin DC output current (VGND = VCC and VSENSE < 0 V)

MultiSense pin DC output current in reverse (VCC < 0 V)

-20

EMAX

Maximum switching energy (single pulse) (TDEMAG = 0.4 ms;

Tjstart = 150 °C)

103

VESD

Electrostatic discharge (JEDEC 22A-114F)



INPUT0,1



MultiSense



SEn, SEL0,1, FaultRST



OUTPUT0,1



VCC

4000

2000

4000

VESD

Charge device model (CDM-AEC-Q100-011)

750

Junction operating temperature

-40 to 150

°C

Tstg

Storage temperature

-55 to 150

2.2

Thermal data

Table 4: Thermal data

Symbol

Parameter

Typ. value

Unit

Rthj-board

Thermal resistance junction-board (1)

3.4

°C/W

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-5)(1)(2)

50.6

Rthj-amb

Thermal resistance junction-ambient (JEDEC JESD 51-7)(1)(3)

15.8

Notes:

(1)One channel ON.

(2)Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace

(3)Device mounted on four-layers 2s2p PCB

2.3

Main electrical characteristics

7 V < VCC < 28 V; -40°C < Tj < 150°C, unless otherwise specified.

All typical values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified.

Table 5: Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC

Operating supply

voltage

VUSD

Undervoltage

shutdown

VUSDReset

Undervoltage

shutdown reset

VUSDhyst

Undervoltage

shutdown hysteresis

0.3

RON

On-state resistance(1)

IOUT = 15 A; Tj = 25°C

mΩ

IOUT = 15 A; Tj = 150°C

IOUT = 15 A; VCC = 4 V; Tj = 25°C

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