© Semiconductor Components Industries, LLC, 2015

January, 2015 − Rev. 12

1

Publication Order Number:

MJE2955T/D

MJE2955T (PNP),

MJE3055T (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

60

Vdc

Collector−Base Voltage

70

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current

10

Adc

Base Current

6.0

Adc

Total Device Dissipation

Derate above 25

°C

(Note 1)

75

0.6

W

W/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.67

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 VOLTS − 75 WATTS

www.onsemi.com

MARKING DIAGRAM

MJExx55T = Device Code

xx = 29 or 30

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MJExx55TG

AY WW

Device

Package

Shipping

ORDERING INFORMATION

MJE2955TG

TO−220

(Pb−Free)

50 Units / Rail

MJE3055TG

TO−220

(Pb−Free)

50 Units / Rail

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP

NPN

TO−220

CASE 221A−09

STYLE 1

1

2

3

4