NJVMJD50T4G datasheet(3/4 Pages) ONSEMI

3 / 4 page

MJE2955T (PNP), MJE3055T (NPN)

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5.0

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.2

0.1

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C (D = 0.1)

7.0

5.0 ms

1.0ms

50 60

0.5

7.0

3.0

0.7

0.3

TJ = 150°C

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150

°C. TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk)

≤ 150°C. At high case temperatures, thermal

limitations will reduce the power that can be handled to

values less than the limitations imposed by second

breakdown.

TC, CASE TEMPERATURE (°C)

100

175

Figure 2. DC Current Gain

125

150

500

0.01

Figure 3. Power Derating

IC, COLLECTOR CURRENT (AMP)

5.0

0.02

0.05

0.1

0.2

1.0

2.0

0.5

300

200

100

5.0

TJ = 150°C

°C

-55

°C

VCE = 2.0 V

MJE3055T

MJE2955T

0.1

IC, COLLECTOR CURRENT (AMP)

0.5

1.0

0.2 0.3

2.0 3.0

Figure 4. “On” Voltages

2.0

1.6

1.2

0.8

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

MJE2955T

0.1

IC, COLLECTOR CURRENT (AMP)

0.5

1.0

0.2 0.3

2.0

3.0

1.4

1.2

1.0

0.8

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

MJE3055T

0.6

0.2

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