NJVMJD50T4G datasheet(2/4 Pages) ONSEMI

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MJE2955T (PNP), MJE3055T (NPN)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 200 mAdc, IB = 0)

VCEO(sus)

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

ICEO

−

700

mAdc

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)

ICEX

−

1.0

5.0

mAdc

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150°C)

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 2)

(IC = 4.0 Adc, VCE = 4 0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

5.0

100

−

Collector−Emitter Saturation Voltage (Note 2)

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

−

1.1

8.0

Vdc

Base−Emitter On Voltage (Note 2)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

2.0

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 20%.

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